BUP50 Specs and Replacement
Type Designator: BUP50
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 300 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 100 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO3
BUP50 Substitution
- BJT ⓘ Cross-Reference Search
BUP50 datasheet
BUP50A MECHANICAL DATA NPN MULTI-EPITAXIAL Dimensions in mm VERY FAST SWITCHING HIGH POWER TRANSISTOR 25.4 (1.0) FEATURES 10.92 1.57 (0.430) (0.062) DIFFUSED BY SEMEFAB VERY LOW VCE(sat) VERY FAST SWITCHING HIGH SWITCHING CURRENTS 1 2 HIGH RELIABILITY MILITARY OPTIONS AVAILABLE APPLICATIONS +0.4 4.1 0 4.0 0.1 +0.016 11.65 0.35 9.0 (0.161... See More ⇒
Detailed specifications: BUP42, BUP43, BUP44, BUP45, BUP46, BUP47, BUP48, BUP49, TIP31, BUP51, BUP52, BUP53, BUP54, BUP56, BUP57, BUP58, BUP59
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