BUP50 Datasheet, Equivalent, Cross Reference Search
Type Designator: BUP50
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 300 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 100 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO3
BUP50 Transistor Equivalent Substitute - Cross-Reference Search
BUP50 Datasheet (PDF)
bup50a.pdf
BUP50AMECHANICAL DATANPN MULTI-EPITAXIALDimensions in mmVERY FAST SWITCHINGHIGH POWER TRANSISTOR25.4(1.0)FEATURES10.92 1.57(0.430) (0.062) DIFFUSED BY SEMEFAB VERY LOW VCE(sat) VERY FAST SWITCHING HIGH SWITCHING CURRENTS1 2 HIGH RELIABILITY MILITARY OPTIONS AVAILABLEAPPLICATIONS+0.44.1 04.0 0.1+0.01611.65 0.35 9.0(0.161
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .