BUP53 Specs and Replacement
Type Designator: BUP53
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 300 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 60 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO3
BUP53 Substitution
- BJT ⓘ Cross-Reference Search
BUP53 datasheet
BUP53R MECHANICAL DATA NPN MULTI-EPITAXIAL Dimensions in mm TRANSISTOR 25.4 FEATURES (1.0) 10.92 1.57 LOW VCE(SAT) (0.430) (0.062) FAST SWITCHING SINGLE CHIP COSNTRUCTION HIGH SWITCHING CURRENTS HIGH RELIABILITY 1 2 MILITARY OPTIONS AVAILABLE APPLICATIONS +0.4 4.1 0 4.0 0.1 +0.016 11.65 0.35 9.0 (0.161 0 ) (0.157 0.004) (0.459 ... See More ⇒
Detailed specifications: BUP45, BUP46, BUP47, BUP48, BUP49, BUP50, BUP51, BUP52, 2SD2499, BUP54, BUP56, BUP57, BUP58, BUP59, BUPD1520, BUR10, BUR11
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