2N3251 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N3251
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO18
2N3251 Transistor Equivalent Substitute - Cross-Reference Search
2N3251 Datasheet (PDF)
2n3250 2n3251.pdf
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
2n3251csm.pdf
2N3251CSMDimensions in mm (inches). Bipolar PNP Device in a 0.51 0.10 Hermetically sealed LCC1 (0.02 0.004) 0.31rad.(0.012) Ceramic Surface Mount 3Package for High Reliability Applications 211.91 0.10(0.075 0.004)A0.31rad.Bipolar PNP Device. (0.012)3.05 0.13(0.12 0.005)1.40(0.055)1.02 0.10max.VCEO = 60V A =(0.04 0.004
2n3251dcsm.pdf
DUAL PNP SWITCHING TRANSISTORS 2N3251DCSM Dual Silicon Planer PNP Transistors Hermetic Ceramic Surface Mount Package Designed For Small Signal, General Purpose and Switching Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (Each Side, TA = 25C unless otherwise stated) Each Side Total Device VCBO Collector Base Voltage -50V VCEO C
2n3250 2n3251-a.pdf
Boca Semiconductor Corp. BSC http://www.bocasemi.comhttp://www.bocasemi.comhttp://www.bocasemi.comhttp://www.bocasemi.comhttp://www.bocasemi.com
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
