All Transistors. BUS11-4 Datasheet

 

BUS11-4 Datasheet and Replacement


   Type Designator: BUS11-4
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 400 V
   Maximum Collector-Emitter Voltage |Vce|: 300 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO3
 

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BUS11-4 Datasheet (PDF)

 9.1. Size:77K  inchange semiconductor
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BUS11-4

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUS11/A DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min)-BUS11 450V (Min)-BUS11A APPLICATIONS Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER

Datasheet: BUR607D , BUR608 , BUR608D , BUR61 , BUR62 , BUR806 , BUR807 , BUS11 , S9018 , BUS11-6 , BUS11A , BUS11B , BUS12 , BUS12-4 , BUS12-6 , BUS12A , BUS12B .

History: AUY29 | BCR183S

Keywords - BUS11-4 transistor datasheet

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