BUS11-4 Datasheet, Equivalent, Cross Reference Search
Type Designator: BUS11-4
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 200 °C
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO3
BUS11-4 Transistor Equivalent Substitute - Cross-Reference Search
BUS11-4 Datasheet (PDF)
9.1. Size:77K inchange semiconductor
bus11 a.pdf
bus11 a.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUS11/A DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min)-BUS11 450V (Min)-BUS11A APPLICATIONS Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
