BUS12 Datasheet and Replacement
Type Designator: BUS12
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 850 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 200 °C
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO3
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BUS12 Datasheet (PDF)
bus12.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUS12 DESCRIPTION With TO-3 package High voltage,high speed APPLICATIONS Designed for switching-mode power supplies ,CRT scanning,inverters, and other industrial applications PINNING(see fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 Collector Abs
bus12 a.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUS12/A DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min)-BUS12 450V (Min)-BUS12A APPLICATIONS Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER
bus12a.pdf

isc Silicon NPN Power Transistor BUS12ADESCRIPTIONCollectorEmitter Sustaining Voltage: V = 450V(Min.)CEO(SUS)High Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in converters, inverters, switchingregulators, motor control systems etc.ABSOLUTE MAXIMUM RATINGS(T
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: NT331 | 2SC6096 | 2SC1621B2 | 2SC2440 | 2SA2164 | BFT97 | 2N3809
Keywords - BUS12 transistor datasheet
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History: NT331 | 2SC6096 | 2SC1621B2 | 2SC2440 | 2SA2164 | BFT97 | 2N3809



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