BUS12-6 Datasheet, Equivalent, Cross Reference Search
Type Designator: BUS12-6
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 350 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO3
BUS12-6 Transistor Equivalent Substitute - Cross-Reference Search
BUS12-6 Datasheet (PDF)
bus12a.pdf
isc Silicon NPN Power Transistor BUS12ADESCRIPTIONCollectorEmitter Sustaining Voltage: V = 450V(Min.)CEO(SUS)High Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in converters, inverters, switchingregulators, motor control systems etc.ABSOLUTE MAXIMUM RATINGS(T
bus12.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUS12 DESCRIPTION With TO-3 package High voltage,high speed APPLICATIONS Designed for switching-mode power supplies ,CRT scanning,inverters, and other industrial applications PINNING(see fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 Collector Abs
bus12 a.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUS12/A DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min)-BUS12 450V (Min)-BUS12A APPLICATIONS Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
