All Transistors. BUS12A Datasheet

 

BUS12A Datasheet and Replacement


   Type Designator: BUS12A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 125 W
   Maximum Collector-Base Voltage |Vcb|: 850 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO3
 

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BUS12A Datasheet (PDF)

 ..1. Size:181K  inchange semiconductor
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BUS12A

isc Silicon NPN Power Transistor BUS12ADESCRIPTIONCollectorEmitter Sustaining Voltage: V = 450V(Min.)CEO(SUS)High Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in converters, inverters, switchingregulators, motor control systems etc.ABSOLUTE MAXIMUM RATINGS(T

 9.1. Size:116K  inchange semiconductor
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BUS12A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUS12 DESCRIPTION With TO-3 package High voltage,high speed APPLICATIONS Designed for switching-mode power supplies ,CRT scanning,inverters, and other industrial applications PINNING(see fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 Collector Abs

 9.2. Size:77K  inchange semiconductor
 bus12 a.pdf pdf_icon

BUS12A

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUS12/A DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min)-BUS12 450V (Min)-BUS12A APPLICATIONS Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER

Datasheet: BUS11 , BUS11-4 , BUS11-6 , BUS11A , BUS11B , BUS12 , BUS12-4 , BUS12-6 , 2N5551 , BUS12B , BUS13 , BUS13-5 , BUS13-6 , BUS13-7 , BUS131 , BUS131A , BUS131H .

History: 2SB966 | SM2165 | 2N1426 | 2N5152SM | 2SD882-Y

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