BUS13 Specs and Replacement
Type Designator: BUS13
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 175 W
Maximum Collector-Base Voltage |Vcb|: 850 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO3
BUS13 Substitution
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BUS13 datasheet
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUS13 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS Converters Inverters Switching regulators Motor controls PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL P... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUS13A DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS Converters Inverters Switching regulators Motor controls PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL ... See More ⇒
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUS131/A DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- VCEO(SUS)= 450V (Min)-BUS131 500V (Min)-BUS131A APPLICATIONS Designed for use in very fast switching applications in inductive circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER MAX UNIT BUS... See More ⇒
Detailed specifications: BUS11-6, BUS11A, BUS11B, BUS12, BUS12-4, BUS12-6, BUS12A, BUS12B, 2N2222, BUS13-5, BUS13-6, BUS13-7, BUS131, BUS131A, BUS131H, BUS132, BUS132A
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