BUS48P Specs and Replacement

Type Designator: BUS48P

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 125 W

Maximum Collector-Base Voltage |Vcb|: 850 V

Maximum Collector-Emitter Voltage |Vce|: 450 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 6

Noise Figure, dB: -

Package: TOP3

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BUS48P datasheet

 ..1. Size:232K  inchange semiconductor

 bus48p.pdf pdf_icon

BUS48P

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 9.1. Size:208K  inchange semiconductor

 bus48a.pdf pdf_icon

BUS48P

isc Silicon NPN Power Transistor BUS48A DESCRIPTION High Voltage Capability High Current Capability Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ulary suited for line-operated swtchmode... See More ⇒

 9.2. Size:217K  inchange semiconductor

 bus48ap.pdf pdf_icon

BUS48P

isc Silicon NPN Power Transistor BUS48AP DESCRIPTION High Voltage Capability High Current Capability Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ulary suited for line-operated swtchmod... See More ⇒

Detailed specifications: BUS46P, BUS47, BUS47A, BUS47AP, BUS47P, BUS48, BUS48A, BUS48AP, SS8050, BUS50, BUS51, BUS52, BUS97, BUS97A, BUS98, BUS98A, BUT100

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