BUT12 Specs and Replacement

Type Designator: BUT12

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 850 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO220

 BUT12 Substitution

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BUT12 datasheet

 ..1. Size:80K  philips

but12 1.pdf pdf_icon

BUT12

DISCRETE SEMICONDUCTORS DATA SHEET BUT12; BUT12A Silicon diffused power transistors Product specification 1997 Aug 13 Supersedes data of February 1996 File under Discrete Semiconductors, SC06 Philips Semiconductors Product specification Silicon diffused power transistors BUT12; BUT12A DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a TO-220AB package.... See More ⇒

 ..2. Size:25K  fairchild semi

but12.pdf pdf_icon

BUT12

BUT12/12A High Voltage Power Switching Applications TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BUT12 850 V BUT12A 1000 V VCEO Collector-Emitter Voltage BUT12 400 V BUT12A 450 V IC Collector Current (DC) 8 A ICP *Collector Current (Pulse) ... See More ⇒

 0.1. Size:59K  philips

but12xi 1.pdf pdf_icon

BUT12

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT12XI GENERAL DESCRIPTION Improved high-voltage, high-speed glass-passivated npn power transistor in a plastic full-pack envelope specially suited for overhead/high frequency lighting ballast applications and converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMB... See More ⇒

 0.2. Size:52K  philips

but12ai 1.pdf pdf_icon

BUT12

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT12AI GENERAL DESCRIPTION Improved high-voltage, high-speed glass-passivated npn power transistor in a TO220AB envelope specially suited for use in overhead/high frequency lighting ballast applications and converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL ... See More ⇒

Detailed specifications: BUT11-5, BUT11-6, BUT11-7, BUT11A, BUT11AF, BUT11AFI, BUT11AX, BUT11F, TIP2955, BUT12A, BUT12AF, BUT12AFI, BUT12F, BUT13, BUT131, BUT131A, BUT131H

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