BUT12 Datasheet, Equivalent, Cross Reference Search
Type Designator: BUT12
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 850 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO220
BUT12 Transistor Equivalent Substitute - Cross-Reference Search
BUT12 Datasheet (PDF)
but12 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBUT12; BUT12ASilicon diffused power transistorsProduct specification 1997 Aug 13Supersedes data of February 1996File under Discrete Semiconductors, SC06Philips Semiconductors Product specificationSilicon diffused power transistors BUT12; BUT12ADESCRIPTIONHigh-voltage, high-speed,glass-passivated NPN powertransistor in a TO-220AB package.
but12.pdf
BUT12/12AHigh Voltage Power Switching ApplicationsTO-22011.Base 2.Collector 3.EmitterNPN Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage: BUT12 850 V: BUT12A 1000 V VCEO Collector-Emitter Voltage: BUT12 400 V: BUT12A 450 V IC Collector Current (DC) 8 A ICP *Collector Current (Pulse)
but12xi 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT12XI GENERAL DESCRIPTIONImproved high-voltage, high-speed glass-passivated npn power transistor in a plastic full-pack envelope speciallysuited for overhead/high frequency lighting ballast applications and converters, inverters, switching regulators,motor control systems, etc.QUICK REFERENCE DATASYMB
but12ai 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT12AI GENERAL DESCRIPTIONImproved high-voltage, high-speed glass-passivated npn power transistor in a TO220AB envelope specially suitedfor use in overhead/high frequency lighting ballast applications and converters, inverters, switching regulators,motor control systems, etc.QUICK REFERENCE DATASYMBOL
but12f 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBUT12F; BUT12AFSilicon diffused power transistors1997 Aug 13Product specificationSupersedes data of February 1996File under Discrete Semiconductors, SC06Philips Semiconductors Product specificationSilicon diffused power transistors BUT12F; BUT12AFDESCRIPTION PINNINGHigh-voltage, high-speed,PIN DESCRIPTIONglass-passivated NPN power1 b
but12a.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT12A DESCRIPTION High Voltage High Speed Switching APPLICATIONS Converters Inverters Switching regulators Motor control systems ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitt
but12f but12af.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUT12F BUT12AF DESCRIPTION With TO-220Fa package High voltage ,high speed APPLICATIONS Converters Inverters Switching regulators Motor control systems PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 EmitterAbsolute maximum ratings (Tc=
but12ax.pdf
isc Silicon NPN Power Transistor BUT12AXDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min.)CEO(SUS)High Speed Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSConvertersInvertersSwitching regulatorsMotor control systemsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
