BUT12A Datasheet and Replacement

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT12A DESCRIPTION High Voltage High Speed Switching APPLICATIONS Converters Inverters Switching regulators Motor control systems ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitt

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT12AI GENERAL DESCRIPTIONImproved high-voltage, high-speed glass-passivated npn power transistor in a TO220AB envelope specially suitedfor use in overhead/high frequency lighting ballast applications and converters, inverters, switching regulators,motor control systems, etc.QUICK REFERENCE DATASYMBOL

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUT12F BUT12AF DESCRIPTION With TO-220Fa package High voltage ,high speed APPLICATIONS Converters Inverters Switching regulators Motor control systems PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 EmitterAbsolute maximum ratings (Tc=

isc Silicon NPN Power Transistor BUT12AXDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min.)CEO(SUS)High Speed Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSConvertersInvertersSwitching regulatorsMotor control systemsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P