BUT13P Datasheet and Replacement
Type Designator: BUT13P
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 28 A
Max. Operating Junction Temperature (Tj): 200 °C
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO218
BUT13P Substitution
BUT13P Datasheet (PDF)
but131 a.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUT131/A DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min)- BUT131 500V(Min)- BUT131A High Switching Speed APPLICATIONS Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAME
but131h.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT131H DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) High Switching Speed APPLICATIONS Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCES Collector-
Datasheet: BUT12A , BUT12AF , BUT12AFI , BUT12F , BUT13 , BUT131 , BUT131A , BUT131H , A1266 , BUT13PFI , BUT14 , BUT15 , BUT16 , BUT18 , BUT18A , BUT18AF , BUT18F .
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History: 2SC3356C | TA2307



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