All Transistors. BUT13P Datasheet

 

BUT13P Datasheet and Replacement


   Type Designator: BUT13P
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 600 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 28 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO218
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BUT13P Datasheet (PDF)

 9.1. Size:147K  inchange semiconductor
 but131 a.pdf pdf_icon

BUT13P

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUT131/A DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min)- BUT131 500V(Min)- BUT131A High Switching Speed APPLICATIONS Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAME

 9.2. Size:138K  inchange semiconductor
 but131h.pdf pdf_icon

BUT13P

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT131H DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) High Switching Speed APPLICATIONS Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCES Collector-

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2N6053 | KTC2553 | GT305B | 2SB1097 | 2N3056 | BLY87 | KSY63

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