BUT70 Specs and Replacement
Type Designator: BUT70
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 125 V
Maximum Collector Current |Ic max|: 40 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TOP3
BUT70 Substitution
- BJT ⓘ Cross-Reference Search
BUT70 datasheet
BUT70 HIGH POWER NPN SILICON TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED VERY LOW SATURATION VOLTAGE AND HIGH GAIN APPLICATION 3 SWITCHING REGULATORS 2 MOTOR CONTROL 1 HIGH FREQUENCY AND EFFICENCY CONVERTERS TO-218 DESCRIPTION The BUT70 is a Multiepitaxial planar NPN transistor in TO-218 plastic package... See More ⇒
BUT70W HIGH POWER NPN TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED VERY LOW SATURATION VOLTAGE AND HIGH GAIN APPLICATION 3 2 SWITCHING REGULATORS 1 MOTOR CONTROL HIGH FREQUENCY AND EFFICENCY TO-247 CONVERTERS DESCRIPTION The BUT70W is a Multiepitaxial planar NPN transistor in TO-247 plastic pac... See More ⇒
Detailed specifications: BUT56, BUT56A, BUT56A-668, BUT56T, BUT57, BUT57I, BUT60, BUT62, A1941, BUT70I, BUT71, BUT71I, BUT72, BUT72I, BUT76, BUT76A, BUT90
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