BUV1O Specs and Replacement

Type Designator: BUV1O

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 160 V

Maximum Collector-Emitter Voltage |Vce|: 125 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 25 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 8 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO3

 BUV1O Substitution

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BUV1O datasheet

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Detailed specifications: BUV10N, BUV11, BUV11CECC, BUV11N, BUV12, BUV18, BUV18X, BUV19, 8050, BUV20, BUV21, BUV21N, BUV22, BUV23, BUV24, BUV25, BUV26

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