BUV47AP Specs and Replacement
Type Designator: BUV47AP
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 120 W
Maximum Collector-Base Voltage |Vcb|: 1000 V
Maximum Collector-Emitter Voltage |Vce|: 450 V
Maximum Collector Current |Ic max|: 9 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 3.2
Package: TO218
BUV47AP Substitution
- BJT ⓘ Cross-Reference Search
BUV47AP datasheet
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isc Silicon NPN Power Transistor BUV47AFI DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min.) CEO(SUS) Collector-Emitter Saturation Voltage- V = 1.5V(Max.)@I = 5A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for 220V switch mode power supply, DC and AC motor control ... See More ⇒
isc Silicon NPN Power Transistor BUV47A DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min.) CEO(SUS) Collector-Emitter Saturation Voltage- V = 1.5V(Max.)@I = 5A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for 220V switchmode power supply, DC and AC motor control app... See More ⇒
Detailed specifications: BUV46, BUV46A, BUV46AFI, BUV46FI, BUV47, BUV47A, BUV47AF, BUV47AFI, MJE350, BUV47B, BUV47FI, BUV47I, BUV48, BUV48A, BUV48AF, BUV48AFI, BUV48B
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