BUV48CFI Specs and Replacement

Type Designator: BUV48CFI

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 1200 V

Maximum Collector-Emitter Voltage |Vce|: 700 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 5 MHz

Collector Capacitance (Cc): 250 pF

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: ISOTOP3

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BUV48CFI datasheet

 ..2. Size:214K  inchange semiconductor

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BUV48CFI

isc Silicon NPN Power Transistor BUV48CFI DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V (Min) CEO(SUS) High Current Capability Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching and industrial applications from single and three-phase mains. Absolute maximum ratings(Ta=25... See More ⇒

 8.1. Size:213K  inchange semiconductor

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BUV48CFI

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 9.1. Size:308K  motorola

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BUV48CFI

Order this document MOTOROLA by BUV48/D SEMICONDUCTOR TECHNICAL DATA BUV48 BUV48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES The BUV48/BUV48A transistors are designed for high voltage, high speed, power NPN SILICON switching in inductive circuits where fall time is critical. They are particularly suited for POWER TRANSISTORS line operated switchmode applica... See More ⇒

Detailed specifications: BUV47FI, BUV47I, BUV48, BUV48A, BUV48AF, BUV48AFI, BUV48B, BUV48C, BC547, BUV48CI, BUV48FI, BUV48I, BUV48T, BUV50, BUV51, BUV52, BUV52A

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