BUV62A Datasheet, Equivalent, Cross Reference Search
Type Designator: BUV62A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 250 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Collector Current |Ic max|: 40 A
Max. Operating Junction Temperature (Tj): 200 °C
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO3
BUV62A Transistor Equivalent Substitute - Cross-Reference Search
BUV62A Datasheet (PDF)
..1. Size:204K inchange semiconductor
buv62a.pdf
buv62a.pdf
isc Silicon NPN Power Transistor BUV62ADESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorFor audio amplifier applicationsABSOLUTE MAXIMUM RATINGS
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
