BUW11A Specs and Replacement

Type Designator: BUW11A

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 1000 V

Maximum Collector-Emitter Voltage |Vce|: 450 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 5

Noise Figure, dB: -

Package: TOP3

 BUW11A Substitution

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BUW11A datasheet

 ..1. Size:122K  inchange semiconductor

buw11 buw11a.pdf pdf_icon

BUW11A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUW11 BUW11A DESCRIPTION With TO-3PN package High voltage ;high speed APPLICATIONS Converters Inverters Switching regulators Motor control systems PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings... See More ⇒

 ..2. Size:213K  inchange semiconductor

buw11a.pdf pdf_icon

BUW11A

isc Silicon NPN Power Transistor BUW11A DESCRIPTION High Voltage High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Converters Inverters Switching regulators Motor control systems ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1000 V CBO V Collector-Emitter... See More ⇒

 0.1. Size:79K  philips

buw11w buw11aw 1.pdf pdf_icon

BUW11A

DISCRETE SEMICONDUCTORS DATA SHEET BUW11W; BUW11AW Silicon diffused power transistors 1997 Aug 14 Product specification File under Discrete Semiconductors, SC06 Philips Semiconductors Product specification Silicon diffused power transistors BUW11W; BUW11AW DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT429 package. e APPLICATIONS Converte... See More ⇒

 0.2. Size:79K  philips

buw11w buw11aw.pdf pdf_icon

BUW11A

DISCRETE SEMICONDUCTORS DATA SHEET BUW11W; BUW11AW Silicon diffused power transistors 1997 Aug 14 Product specification File under Discrete Semiconductors, SC06 Philips Semiconductors Product specification Silicon diffused power transistors BUW11W; BUW11AW DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT429 package. e APPLICATIONS Converte... See More ⇒

Detailed specifications: BUV95, BUV98, BUV98A, BUV98AV, BUV98BV, BUV98CV, BUV98V, BUW11, A940, BUW11AF, BUW11F, BUW12, BUW12A, BUW12AF, BUW12F, BUW13, BUW131

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