BUW52 Specs and Replacement
Type Designator: BUW52
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 350 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Collector Current |Ic max|: 16 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TOP3
BUW52 Substitution
- BJT ⓘ Cross-Reference Search
BUW52 datasheet
isc Silicon NPN Power Transistor BUW52 DESCRIPTION High Current Capability Fast Switching Speed Low Saturation Voltage and High Gain Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier applications. Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VALUE UNIT Collector-Emitter... See More ⇒
Detailed specifications: BUW42PFI, BUW44, BUW45, BUW46, BUW48, BUW49, BUW50, BUW51, C1815, BUW52I, BUW57, BUW58, BUW60, BUW60I, BUW61, BUW61I, BUW62
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