BUX20A Specs and Replacement

Type Designator: BUX20A

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 140 W

Maximum Collector-Base Voltage |Vcb|: 160 V

Maximum Collector-Emitter Voltage |Vce|: 125 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 40 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 25 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO3

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BUX20A datasheet

 ..1. Size:205K  inchange semiconductor

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BUX20A

isc Silicon NPN Power Transistor BUX20A DESCRIPTION Collector-Emitter Sustaining Voltage- V = 125V(Min) CEO(SUS) High Current Capability Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching and linear applications in military and industrial equipment. ABSOLUTE MAXIMUM RATINGS(T =25... See More ⇒

 9.1. Size:210K  inchange semiconductor

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BUX20A

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Detailed specifications: BUX17, BUX17A, BUX17B, BUX17C, BUX18, BUX18B, BUX18C, BUX20, 2SC2240, BUX21, BUX22, BUX23, BUX24, BUX25, BUX25-TO258, BUX26, BUX27

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