BUX25 Specs and Replacement
Type Designator: BUX25
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 250 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector-Emitter Voltage |Vce|: 500 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 8 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO3
BUX25 Substitution
- BJT ⓘ Cross-Reference Search
BUX25 datasheet
isc Silicon NPN Power Transistor BUX25 DESCRIPTION Low Collector Saturation Voltage- High Switching Speed High Current Current Capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Desinged for use in switching and linear applications in military and industrial equipment. Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETE... See More ⇒
BUX25S Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) TO3 (TO204AE) PINOUTS 1 Base 2 Emitter Case - Collector Parameter Test Conditions Min. Typ. Max... See More ⇒
Detailed specifications: BUX18B, BUX18C, BUX20, BUX20A, BUX21, BUX22, BUX23, BUX24, 2SC2383, BUX25-TO258, BUX26, BUX27, BUX28, BUX28V, BUX29, BUX30, BUX30AVA
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