BUX29 Specs and Replacement

Type Designator: BUX29

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 80 W

Maximum Collector-Base Voltage |Vcb|: 400 V

Maximum Collector-Emitter Voltage |Vce|: 350 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 7 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 1 MHz

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO3

 BUX29 Substitution

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BUX29 datasheet

 ..1. Size:205K  inchange semiconductor

 bux29.pdf pdf_icon

BUX29

isc Silicon NPN Darlington Power Transistor BUX29 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) High Reliability DARLINGTON 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in firing circuits of cars and general purpose switching applications at high voltages.... See More ⇒

Detailed specifications: BUX23, BUX24, BUX25, BUX25-TO258, BUX26, BUX27, BUX28, BUX28V, 431, BUX30, BUX30AVA, BUX30AVB, BUX30AVC, BUX31, BUX31A, BUX31B, BUX32

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