BUX29 Datasheet, Equivalent, Cross Reference Search
Type Designator: BUX29
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 350 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO3
BUX29 Transistor Equivalent Substitute - Cross-Reference Search
BUX29 Datasheet (PDF)
bux29.pdf
isc Silicon NPN Darlington Power Transistor BUX29DESCRIPTIONCollector-Emitter Sustaining Voltage-V = 400V(Min)CEO(SUS)High ReliabilityDARLINGTON100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in firing circuits of cars and general purposeswitching applications at high voltages.
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: MP14B