BUX30AVA Specs and Replacement

Type Designator: BUX30AVA

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 90 W

Maximum Collector-Base Voltage |Vcb|: 350 V

Maximum Collector-Emitter Voltage |Vce|: 250 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 250

Noise Figure, dB: -

Package: TO3

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BUX30AVA datasheet

 9.1. Size:205K  inchange semiconductor

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BUX30AVA

isc Silicon NPN Darlington Power Transistor BUX30 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) High Reliability DARLINGTON 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for automotive ignition applications and inverter circuits for motor control. ABSOLUTE MAXIMUM... See More ⇒

Detailed specifications: BUX25, BUX25-TO258, BUX26, BUX27, BUX28, BUX28V, BUX29, BUX30, TIP32C, BUX30AVB, BUX30AVC, BUX31, BUX31A, BUX31B, BUX32, BUX32A, BUX32B

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