BUX31 Specs and Replacement

Type Designator: BUX31

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 800 V

Maximum Collector-Emitter Voltage |Vce|: 350 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO3

 BUX31 Substitution

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BUX31 datasheet

 ..1. Size:205K  inchange semiconductor

 bux31 bux31a bux31b.pdf pdf_icon

BUX31

isc Silicon NPN Power Transistors BUX31/A/B DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- V = 400V (Min)-BUX31 CEO(SUS) = 450V (Min)-BUX31A = 500V (Min)-BUX31B Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for off-line power supplies and are also well suited for u... See More ⇒

 ..2. Size:77K  inchange semiconductor

 bux31 a b.pdf pdf_icon

BUX31

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUX31/A/B DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- VCEO(SUS)= 400V (Min)-BUX31 = 450V (Min)-BUX31A = 450V (Min)-BUX31B Low Saturation Voltage APPLICATIONS Designed for off-line power supplies and are also well suited for use in a wide range of invert... See More ⇒

Detailed specifications: BUX27, BUX28, BUX28V, BUX29, BUX30, BUX30AVA, BUX30AVB, BUX30AVC, BD136, BUX31A, BUX31B, BUX32, BUX32A, BUX32B, BUX33, BUX33A, BUX33B

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