BUX31A Datasheet, Equivalent, Cross Reference Search
Type Designator: BUX31A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 900 V
Maximum Collector-Emitter Voltage |Vce|: 450 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO3
BUX31A Transistor Equivalent Substitute - Cross-Reference Search
BUX31A Datasheet (PDF)
bux31 bux31a bux31b.pdf
isc Silicon NPN Power Transistors BUX31/A/BDESCRIPTION High Switching SpeedCollector-Emitter Sustaining Voltage-: V = 400V (Min)-BUX31CEO(SUS)= 450V (Min)-BUX31A= 500V (Min)-BUX31BLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for off-line power supplies and are also well suitedfor u
bux31 a b.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUX31/A/B DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min)-BUX31 = 450V (Min)-BUX31A = 450V (Min)-BUX31B Low Saturation Voltage APPLICATIONS Designed for off-line power supplies and are also well suited for use in a wide range of invert
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , BD777 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
