BUX40 Specs and Replacement
Type Designator: BUX40
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 120 W
Maximum Collector-Base Voltage |Vcb|: 165 V
Maximum Collector-Emitter Voltage |Vce|: 125 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 8 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO3
BUX40 Substitution
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BUX40 datasheet
BUX40S Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 125V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 20A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ... See More ⇒
isc Silicon NPN Power Transistor BUX40A DESCRIPTION Collector-Emitter Sustaining Voltage- V = 125V(Min) CEO(SUS) High Current Capability Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching and linear applications in military equipment. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL... See More ⇒
Detailed specifications: BUX348APF, BUX348CPF, BUX348PF, BUX35, BUX36, BUX37, BUX38, BUX39, TIP41, BUX40A, BUX41, BUX41A, BUX41B, BUX41N, BUX42, BUX42A, BUX43
Keywords - BUX40 pdf specs
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