BUX40 Datasheet, Equivalent, Cross Reference Search
Type Designator: BUX40
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 120 W
Maximum Collector-Base Voltage |Vcb|: 165 V
Maximum Collector-Emitter Voltage |Vce|: 125 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 8 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO3
BUX40 Transistor Equivalent Substitute - Cross-Reference Search
BUX40 Datasheet (PDF)
bux40.pdf
isc Silicon NPN Power Transistor BUX40DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 125V(Min.)CEO(SUS)Low Collector Saturation Voltage-: V = 1.2V(Max.) @I = 10ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current, high speed, high powerapplications.Absolute maximum ratings(Ta=25
bux40s.pdf
BUX40SDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 125V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 20A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
bux40a.pdf
isc Silicon NPN Power Transistor BUX40ADESCRIPTION Collector-Emitter Sustaining Voltage-: V = 125V(Min)CEO(SUS)High Current CapabilityGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching and linear applications in militaryequipment.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SB1133R
