BUX59 Specs and Replacement

Type Designator: BUX59

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 70 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 90 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 8 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO66

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BUX59 datasheet

 ..1. Size:205K  inchange semiconductor

 bux59.pdf pdf_icon

BUX59

isc Silicon NPN Power Transistor BUX59 DESCRIPTION Low Saturation Voltage Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high frequency and efficiency converters,switching regulators and motor control ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Volt... See More ⇒

Detailed specifications: BUX51X, BUX52, BUX53, BUX54, BUX548PF, BUX55, BUX56, BUX57, 8050, BUX60, BUX61, BUX62, BUX63, BUX64, BUX65, BUX66, BUX66A

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