BUX62 Specs and Replacement
Type Designator: BUX62
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 70 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 8 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO66
BUX62 Substitution
- BJT ⓘ Cross-Reference Search
BUX62 datasheet
isc Silicon NPN Power Transistor BUX62 DESCRIPTION Low Saturation Voltage Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high frequency and efficiency converters,switching regulators and motor control ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN... See More ⇒
Detailed specifications: BUX54, BUX548PF, BUX55, BUX56, BUX57, BUX59, BUX60, BUX61, TIP127, BUX63, BUX64, BUX65, BUX66, BUX66A, BUX66B, BUX66C, BUX67
Keywords - BUX62 pdf specs
BUX62 cross reference
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History: 2N2853-2 | SD5109F | BCF30R
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