BUX65 Specs and Replacement

Type Designator: BUX65

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 70 W

Maximum Collector-Base Voltage |Vcb|: 500 V

Maximum Collector-Emitter Voltage |Vce|: 500 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 8 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO66

 BUX65 Substitution

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BUX65 datasheet

 ..1. Size:211K  inchange semiconductor

 bux65.pdf pdf_icon

BUX65

isc Silicon NPN Power Transistor BUX65 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 500V(Min.) CEO(SUS) Fast Switching Speed High Reliability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high frequency and efficiency converters,switching regulators and motor contro... See More ⇒

Detailed specifications: BUX56, BUX57, BUX59, BUX60, BUX61, BUX62, BUX63, BUX64, 2SC2625, BUX66, BUX66A, BUX66B, BUX66C, BUX67, BUX67A, BUX67B, BUX67C

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