BUX66 Datasheet, Equivalent, Cross Reference Search

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUX66/A DESCRIPTION Contunuous Collector Current-IC= -2A Power Dissipation-PD= 35W @TC= 25 Collector-Emitter Saturation Voltage- : VCE(sat)= -2.5V(Max)@ IC = -1A APPLICATIONSDesigned for high-speed switching and linear amplifier appli- cation for high-voltage operational amplifiers, s

isc Silicon PNP Power Transistors BUX66/ADESCRIPTIONContunuous Collector Current-I = -2ACPower Dissipation-P = 35W @T = 25D CCollector-Emitter Saturation Voltage-: V )= -2.5V(Max)@ I = -1ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-speed switching and linear amplifier appli-cation f

isc Silicon PNP Power Transistors BUX66B/CDESCRIPTIONContunuous Collector Current-I = -2ACPower Dissipation-P = 35W @T = 25D CCollector-Emitter Saturation Voltage-: V )= -2.5V(Max)@ I = -1ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-speed switching and linear amplifier appli-cation