BUX66A Datasheet, Equivalent, Cross Reference Search
Type Designator: BUX66A
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 35 W
Maximum Collector-Base Voltage |Vcb|: 275 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 15 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO66
BUX66A Transistor Equivalent Substitute - Cross-Reference Search
BUX66A Datasheet (PDF)
bux66 bux66a.pdf
isc Silicon PNP Power Transistors BUX66/ADESCRIPTIONContunuous Collector Current-I = -2ACPower Dissipation-P = 35W @T = 25D CCollector-Emitter Saturation Voltage-: V )= -2.5V(Max)@ I = -1ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-speed switching and linear amplifier appli-cation f
bux66 a.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUX66/A DESCRIPTION Contunuous Collector Current-IC= -2A Power Dissipation-PD= 35W @TC= 25 Collector-Emitter Saturation Voltage- : VCE(sat)= -2.5V(Max)@ IC = -1A APPLICATIONSDesigned for high-speed switching and linear amplifier appli- cation for high-voltage operational amplifiers, s
bux66b bux66c.pdf
isc Silicon PNP Power Transistors BUX66B/CDESCRIPTIONContunuous Collector Current-I = -2ACPower Dissipation-P = 35W @T = 25D CCollector-Emitter Saturation Voltage-: V )= -2.5V(Max)@ I = -1ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-speed switching and linear amplifier appli-cation
Datasheet: BUX59 , BUX60 , BUX61 , BUX62 , BUX63 , BUX64 , BUX65 , BUX66 , TIP31 , BUX66B , BUX66C , BUX67 , BUX67A , BUX67B , BUX67C , BUX67D , BUX69 .
