All Transistors. BUX82-4 Datasheet

 

BUX82-4 Datasheet and Replacement


   Type Designator: BUX82-4
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 60 W
   Maximum Collector-Base Voltage |Vcb|: 700 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 4 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO3
 

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BUX82-4 Datasheet (PDF)

 9.1. Size:84K  inchange semiconductor
 bux82 83.pdf pdf_icon

BUX82-4

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUX82/83 DESCRIPTION Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min)-BUX82 = 450V(Min)-BUX83 High Switching Speed APPLICATIONSDesigned for use as high-speed power switch at high voltage. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITBUX82 800VCES Collec

 9.2. Size:205K  inchange semiconductor
 bux82 bux83.pdf pdf_icon

BUX82-4

isc Silicon NPN Power Transistors BUX82/83DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)-BUX82(BR)CEO= 450V(Min)-BUX83High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as high-speed power switch at highvoltage.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

Datasheet: BUX80 , BUX80-4 , BUX80-5 , BUX80-6 , BUX80-7 , BUX81 , BUX81-9 , BUX82 , B647 , BUX82-5 , BUX82-6 , BUX82-7 , BUX83 , BUX83-9 , BUX84 , BUX84-6 , BUX84F .

History: DTD118 | MP4965 | 2SD2121LB | RCA1B01 | CSC1398R | BDW83A | FSB560

Keywords - BUX82-4 transistor datasheet

 BUX82-4 cross reference
 BUX82-4 equivalent finder
 BUX82-4 lookup
 BUX82-4 substitution
 BUX82-4 replacement

 

 
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