BUX82-4 Datasheet, Equivalent, Cross Reference Search
Type Designator: BUX82-4
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO3
BUX82-4 Transistor Equivalent Substitute - Cross-Reference Search
BUX82-4 Datasheet (PDF)
bux82 83.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUX82/83 DESCRIPTION Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min)-BUX82 = 450V(Min)-BUX83 High Switching Speed APPLICATIONSDesigned for use as high-speed power switch at high voltage. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITBUX82 800VCES Collec
bux82 bux83.pdf
isc Silicon NPN Power Transistors BUX82/83DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)-BUX82(BR)CEO= 450V(Min)-BUX83High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as high-speed power switch at highvoltage.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , BD777 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
