All Transistors. BUX86-4 Datasheet

 

BUX86-4 Datasheet and Replacement


   Type Designator: BUX86-4
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 400 V
   Maximum Collector-Emitter Voltage |Vce|: 300 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 10 MHz
   Forward Current Transfer Ratio (hFE), MIN: 5
   Noise Figure, dB: -
   Package: TO126
 

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BUX86-4 Datasheet (PDF)

 9.1. Size:41K  philips
 bux86p 87p 1.pdf pdf_icon

BUX86-4

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUX86P BUX87P GENERAL DESCRIPTIONHigh voltage, high speed glass passivated npn power transistors in a SOT82 envelope intended for use inconverters, inverters, switching regulators, motor control systems and switching applications.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITBUX 86P 87

 9.2. Size:107K  siemens
 bux86 bux87.pdf pdf_icon

BUX86-4

Datasheet: BUX83 , BUX83-9 , BUX84 , BUX84-6 , BUX84F , BUX85 , BUX85F , BUX86 , BC547 , BUX86-5 , BUX86-6 , BUX86-7 , BUX86P , BUX87 , BUX87-9 , BUX87P , BUX88 .

History: 2N2800-46 | 2N5662 | SS8550E | BD795 | 2SB1429 | 2SD1697 | 2SC1355

Keywords - BUX86-4 transistor datasheet

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