All Transistors. BUX86-4 Datasheet

 

BUX86-4 Datasheet and Replacement


   Type Designator: BUX86-4
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 400 V
   Maximum Collector-Emitter Voltage |Vce|: 300 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 10 MHz
   Forward Current Transfer Ratio (hFE), MIN: 5
   Noise Figure, dB: -
   Package: TO126
 

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BUX86-4 Datasheet (PDF)

 9.1. Size:41K  philips
 bux86p 87p 1.pdf pdf_icon

BUX86-4

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUX86P BUX87P GENERAL DESCRIPTIONHigh voltage, high speed glass passivated npn power transistors in a SOT82 envelope intended for use inconverters, inverters, switching regulators, motor control systems and switching applications.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITBUX 86P 87

 9.2. Size:107K  siemens
 bux86 bux87.pdf pdf_icon

BUX86-4

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2SA956H6 | NSS40600CF8T1G

Keywords - BUX86-4 transistor datasheet

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