BUX86-4 Specs and Replacement

Type Designator: BUX86-4

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 20 W

Maximum Collector-Base Voltage |Vcb|: 400 V

Maximum Collector-Emitter Voltage |Vce|: 300 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 10 MHz

Forward Current Transfer Ratio (hFE), MIN: 5

Noise Figure, dB: -

Package: TO126

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BUX86-4 datasheet

 9.1. Size:41K  philips

 bux86p 87p 1.pdf pdf_icon

BUX86-4

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUX86P BUX87P GENERAL DESCRIPTION High voltage, high speed glass passivated npn power transistors in a SOT82 envelope intended for use in converters, inverters, switching regulators, motor control systems and switching applications. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT BUX 86P 87... See More ⇒

 9.2. Size:107K  siemens

 bux86 bux87.pdf pdf_icon

BUX86-4

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Detailed specifications: BUX83, BUX83-9, BUX84, BUX84-6, BUX84F, BUX85, BUX85F, BUX86, BDT88, BUX86-5, BUX86-6, BUX86-7, BUX86P, BUX87, BUX87-9, BUX87P, BUX88

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