BUX97B Datasheet and Replacement
Type Designator: BUX97B
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 800 V
Maximum Collector-Emitter Voltage |Vce|: 450 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO3
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BUX97B Datasheet (PDF)
bux97b.pdf

isc Silicon NPN Power Transistor BUX97BDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min.)CEO(SUS)High Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in off-line power supplies and are also wellsuited for use in a wide range of inverter or converter circuitsand pulse-width-mo
bux97.pdf

isc Silicon NPN Power Transistor BUX97DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 350V(Min.)CEO(SUS)High Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in off-line power supplies and are also wellsuited for use in a wide range of inverter or converter circuitsand pulse-width-mod
bux97a.pdf

isc Silicon NPN Power Transistor BUX97ADESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min.)CEO(SUS)High Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in off-line power supplies and are also wellsuited for use in a wide range of inverter or converter circuitsand pulse-width-mo
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: RN1909 | GES5812 | 40500 | KT8176V | 2G109 | NTE2547 | SJT5198NPN
Keywords - BUX97B transistor datasheet
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History: RN1909 | GES5812 | 40500 | KT8176V | 2G109 | NTE2547 | SJT5198NPN



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