BUY72-4 Specs and Replacement
Type Designator: BUY72-4
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 280 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 2 MHz
Collector Capacitance (Cc): 200 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO3
BUY72-4 Substitution
- BJT ⓘ Cross-Reference Search
BUY72-4 datasheet
isc Silicon NPN Power Transistor BUY72 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 200V(Min.) (BR)CEO Low Collector Saturation Voltage- V = 1.5V@ I = 7A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general switching applications at higher outputs. ABSOLUTE MAXIMUM RATINGS(T =25 ) a ... See More ⇒
Detailed specifications: BUY69B, BUY69C, BUY70A, BUY70B, BUY70C, BUY71, BUY72, BUY72-10, 13009, BUY72-6, BUY73, BUY74, BUY75, BUY76, BUY77, BUY78, BUY79
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