BUY82 Datasheet, Equivalent, Cross Reference Search
Type Designator: BUY82
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 40 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO3
BUY82 Transistor Equivalent Substitute - Cross-Reference Search
BUY82 Datasheet (PDF)
buy82cecc.pdf
BUY82CECCDimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 60V dia.IC = 10A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100)
buy82x.pdf
BUY82X 8.51 (0.34)MECHANICAL DATA 9.40 (0.37)NPN SILICON PLANER EPITAXIAL Dimensions in mm (inches) 7.75 (0.305)8.51 (0.335) TRANSISTOR IN HERMETICALLY SEALED METAL CASE 6.10 (0.240)6.60 (0.260) 0.89(0.035)max.12.70(0.500)0.41 (0.016)min.APPLICATIONS 0.53 (0.021)dia.Intended for High Voltage, High Current Switching Applications up to 10A 5.08 (0.200)
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
