BUY82 Specs and Replacement
Type Designator: BUY82
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 40 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO3
BUY82 Substitution
- BJT ⓘ Cross-Reference Search
BUY82 datasheet
BUY82CECC Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 60V dia. IC = 10A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) ... See More ⇒
BUY82X 8.51 (0.34) MECHANICAL DATA 9.40 (0.37) NPN SILICON PLANER EPITAXIAL Dimensions in mm (inches) 7.75 (0.305) 8.51 (0.335) TRANSISTOR IN HERMETICALLY SEALED METAL CASE 6.10 (0.240) 6.60 (0.260) 0.89 (0.035)max. 12.70 (0.500) 0.41 (0.016) min. APPLICATIONS 0.53 (0.021) dia. Intended for High Voltage, High Current Switching Applications up to 10A 5.08 (0.200) ... See More ⇒
Detailed specifications: BUY74, BUY75, BUY76, BUY77, BUY78, BUY79, BUY80, BUY81, A733, BUY83, BUY84, BUY85, BUY86, BUY87, BUY88, BUY89, BUY90
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