C424 Datasheet and Replacement
Type Designator: C424
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.3
W
Maximum Collector-Base Voltage |Vcb|: 40
V
Maximum Collector-Emitter Voltage |Vce|: 30
V
Maximum Emitter-Base Voltage |Veb|: 10
V
Max. Operating Junction Temperature (Tj): 125
°C
Transition Frequency (ft): 60
MHz
Collector Capacitance (Cc): 25
pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package:
TO106
-
BJT ⓘ Cross-Reference Search
C424 Datasheet (PDF)
0.2. Size:262K toshiba
2sc4249.pdf 

2SC4249 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4249 TV VHF RF Amplifier Applications Unit: mm High gain: Gpe = 24dB (typ.) (f = 200 MHz) Low noise: NF = 2.0dB (typ.) (f = 200 MHz) Excellent forward AGC characteristics Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 30 VCollector-emitter volta
0.3. Size:335K toshiba
2sc4245.pdf 

2SC4245 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4245 TV Tuner, UHF Mixer Applications Unit: mm VHF~UHF Band RF Amplifier Applications Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 30 VCollector-emitter voltage VCEO 15 VEmitter-base voltage VEBO 3 VCollector current IC 50 mABase current IB 25 mAColle
0.4. Size:305K toshiba
2sc4246.pdf 

2SC4246 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4246 TV Tuner, UHF Oscillator Applications (common base) Unit: mm TV Tuner, UHF Converter Applications (common base) Transition frequency is high and dependent on current excellently. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 30 VCollector-emitter vo
0.5. Size:273K toshiba
2sc4244.pdf 

2SC4244 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4244 UHF TV Tuner RF Amplifier Applications Unit: mm Low noise figure: NF = 4dB (typ.) High power gain: Gpb = 17dB (typ.) Excellent forward AGC characteristics Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 25 VCollector-emitter voltage VCEO 20
0.6. Size:300K toshiba
2sc4248.pdf 

2SC4248 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4248 TV Tuner, UHF Oscillator Applications Unit: mm (common collector) Transition frequency is high and dependent on current excellently. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 V
0.7. Size:302K toshiba
2sc4247.pdf 

2SC4247 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4247 TV Tuner, UHF Oscillator Applications Unit: mm (common collector) Transition frequency is high and dependent on current excellently. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 V
0.8. Size:139K utc
2sc4242.pdf 

UNISONIC TECHNOLOGIES CO., LTD 2SC4242 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN POWER TRANSISTORS DESCRIPTION The UTC 2SC4242 is a high-voltage, high-speed switchingpower transistor and designed particularly for 115 and 220V switch mode applications, such as switching regulators, inverters, DC-DC converter and general purpose power amplifiers. FEATURES * Low satura
0.10. Size:108K shantou-huashan
hc4242.pdf 

NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HC4242 APPLICATIONS High Speed Switching And Power Amplifier. ABSOLUTE MAXIMUM RATINGSTa=25 TO-220 TstgStorage Temperature -55~150TjJunction Temperature150PCCollector Dissipation
0.11. Size:77K shantou-huashan
hc4242s.pdf 

NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HC4242S APPLICATIONS high Voltage high-Speed Switching. ABSOLUTE MAXIMUM RATINGSTa=25 TO-220 TstgStorage Temperature -55~150 TjJunction Temperature150 PCCollector DissipationTc=25
0.12. Size:179K inchange semiconductor
2sc4245.pdf 

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4245DESCRIPTIONHigh Current-Gain Bandwidth Productf = 2400MHz TYP. @V = 10 V, I = 2 mAT CE CLow Noise100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSTV tuner , UHF mixer applicationsVHF~UHF band RF amplifier applicationsABSOLUTE MAXIMUM R
0.13. Size:179K inchange semiconductor
2sc4246.pdf 

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4246DESCRIPTIONHigh Current-Gain Bandwidth Productf = 1500MHz TYP. @V = 10 V, I = 8 mAT CE CLow Noise100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSTV tuner , UHF oscillator applicationsTV tuner , UHF converter applicationsABSOLUTE MAXIM
0.14. Size:174K inchange semiconductor
2sc4242.pdf 

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4242DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)Fast Switching SpeedCollector-Emitter Saturation Voltage-: V = 0.8V(Max.)@ I = 4.0ACE(sat) C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use i
0.15. Size:178K inchange semiconductor
2sc4247.pdf 

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4247DESCRIPTIONHigh Current-Gain Bandwidth Productf = 4 GHz TYP. @V = 10 V, I = 10 mAT CE CLow Noise100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV tuner , UHF oscillator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYM
Datasheet: 2N3200
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History: 2SA1797Q
| BD828A
| AC847BWQ
| DC5424
| 2SAR554PFRA
| 2SA1840
| BUY38-5
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