C434 Datasheet, Equivalent, Cross Reference Search
Type Designator: C434
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 15 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 100 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO3
C434 Transistor Equivalent Substitute - Cross-Reference Search
C434 Datasheet (PDF)
2sc4346.pdf
DATA SHEETSILICON POWER TRANSISTOR2SC4346,4346-ZNPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH SPEED SWITCHING, HIGH VOLTAGE SWITCHING ORDERING INFORMATION DESCRIPTION The 2SC4346 is a mold power transistor developed for PART NUMBER PACKAGE high-speed switching, high voltage switching, and is ideal 2SC4346 TO-251 (MP-3) for use as a driver in devices such as switching re
2sc4342.pdf
DATA SHEETSILICON POWER TRANSISTOR2SC4342NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING ORDERING INFORMATION DESCRIPTION The 2SC4342 is a high-speed Darlington power transistor. PART NUMBER PACKAGE This transistor is ideal for high-precision control such as PWM 2SC4342 TO-126 (MP-5) control for pulse motors or blushless of OA and FA equi
ktc4347.pdf
RoHS KTC4347SOT-89 KTC4373 TRANSISTOR (NPN) 1. BASE FEATURES Power dissipation 2. COLLECTOR 1 PCM: 500 mW (Tamb=25) 2 3. EMITTER 3 Collector current ICM: 800 mA Collector-base voltage V(BR)CBO: 120 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 2N3159 | BUY83 | 2N329
