C434 Specs and Replacement
Type Designator: C434
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 15 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 100 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO3
C434 Substitution
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C434 datasheet
DATA SHEET SILICON POWER TRANSISTOR 2SC4346,4346-Z NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH SPEED SWITCHING, HIGH VOLTAGE SWITCHING ORDERING INFORMATION DESCRIPTION The 2SC4346 is a mold power transistor developed for PART NUMBER PACKAGE high-speed switching, high voltage switching, and is ideal 2SC4346 TO-251 (MP-3) for use as a driver in devices such as switching re... See More ⇒
DATA SHEET SILICON POWER TRANSISTOR 2SC4342 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING ORDERING INFORMATION DESCRIPTION The 2SC4342 is a high-speed Darlington power transistor. PART NUMBER PACKAGE This transistor is ideal for high-precision control such as PWM 2SC4342 TO-126 (MP-5) control for pulse motors or blushless of OA and FA equi... See More ⇒
RoHS KTC4347 SOT-89 KTC4373 TRANSISTOR (NPN) 1. BASE FEATURES Power dissipation 2. COLLECTOR 1 PCM 500 mW (Tamb=25 ) 2 3. EMITTER 3 Collector current ICM 800 mA Collector-base voltage V(BR)CBO 120 V Operating and storage junction temperature range TJ, Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) ... See More ⇒
Detailed specifications: C400, C40-28, C407, C420, C424, C425, C426, C428, TIP41C, C441, C442, C450, C5, C50-28, C5-8, C5-8Z, C5T2192
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