C442 Datasheet and Replacement

NTMFS5C442NLPower MOSFET40 V, 2.5 mW, 130 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)2.5 mW @ 10 V40

NTMFS5C442NPower MOSFET40 V, 2.3 mW, 140 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)Parameter Symbol Va

Ordering number:EN2851NPN Triple Diffused Planar Silicon Transistor2SC4428800V/6A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed (tf : 0.1 s typ).2039D Wide ASO.[2SC4428] Adoption of MBIT process.16.05.63.4 Micaless package facilitating easy mounting. 3.12.82.0 2

Ordering number:EN2852NPN Triple Diffused Planar Silicon Transistor2SC4429800V/8A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed (tf : 0.1 s typ).2039D Wide ASO.[2SC4429] Adoption of MBIT process.16.05.63.4 Micaless package facilitating easy mounting. 3.12.82.0 2

Ordering number:EN2848NPN Triple Diffused Planar Silicon Transistor2SC4425400V/25A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed (tf : 0.1 s typ).2039D Wide ASO.[2SC4425] Adoption of MBIT process.16.05.63.4 Micaless package facilitating easy mounting. 3.12.82.0

Ordering number:EN2849NPN Triple Diffused Planar Silicon Transistor2SC4426800V/3A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed (tf : 0.1 s typ).2039D Wide ASO.[2SC4426] Adoption of MBIT process.16.05.63.4 Micaless package facilitating easy mounting. 3.12.82.0 2

Ordering number:EN2847NPN Triple Diffused Planar Silicon Transistor2SC4424400V/16A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed (tf : 0.1 s typ).2039D Wide ASO.[2SC4424] Adoption of MBIT process.16.05.63.4 Micaless package facilitating easy mounting. 3.12.82.0

Ordering number:EN2854NPN Triple Diffused Planar Silicon Transistor2SC4423400V/12A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed (tf : 0.1 s typ).2039D Wide ASO.[2SC4423] Adoption of MBIT process.16.05.63.4 Micaless package facilitating easy mounting. 3.12.82.0

Ordering number:EN2850NPN Triple Diffused Planar Silicon Transistor2SC4427800V/4.5A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed (tf : 0.1 s typ).2039D Wide ASO.[2SC4427] Adoption of MBIT process.16.05.63.4 Micaless package facilitating easy mounting. 3.12.82.0

NTMFS5C442NPower MOSFET40 V, 2.3 mW, 140 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)Parameter Symbol Va

NTMFS5C442NLPower MOSFET40 V, 2.8 mW, 121 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseshttp://onsemi.com These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)2.8 mW @ 10 V

NVMFS5C442NPower MOSFET40 V, 2.3 mW, 140 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C442NWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable40 V 2.3

NVMFS5C442NLPower MOSFET40 V, 2.8 mW, 127 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseshttp://onsemi.com NVMFS5C442NLWF - Wettable Flank Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable2.8

NTMFS5C442NLTPower MOSFET40 V, 2.8 mW, 127 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseswww.onsemi.com NTMFS5C442NLTWF - Wettable Flank Option for EnhancedOptical InspectionV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Com

Power Transistors2SC4420Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm15.0 0.3 5.0 0.2Features11.0 0.2 3.2High-speed switchingHigh collector to base voltage VCBO 3.2 0.1Wide area of safe operation (ASO)Satisfactory linearity of foward current transfer ratio hFEFull-pack package which can be installed to the hea

2SC4422Silicon NPN EpitaxialApplicationVHF / UHF wide band amplifierOutlineUPAK12341. Base2. Collector3. Emitter4. Collector (Flange)2SC4422Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 15 VCollector to emitter voltage VCEO 11 VEmitter to base voltage VEBO 2VCollector current IC 50 mACollector power dissipa

SMD Type TransistorsNPN Transistors2SC4422SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=11V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collector - Emitter Voltage VCEO 11 V Emitter - Base Voltage VE

SMC4428 30V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe SMC4428 is the N-Channel logic enhancement 30V/20A, RDS(ON) =6m(typ.)@VGS =10V mode power field effect transistor is produced using 30V/16A, RDS(ON) =8m(typ.)@VGS =4.5V high cell density. advanced trench technology to Super high density cell design for extremely low provide excellent R

SMC4420 30V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe SMC4420 is the N-Channel logic enhancement 30V/14A, RDS(ON) =10m(typ.)@VGS =10V mode power field effect transistor is produced using 30V/12A, RDS(ON) =12m(typ.)@VGS =4.5V high cell density. advanced trench technology to Super high density cell design for extremely low provide excellent

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4428DESCRIPTIONHigh Breakdown Voltage-: V = 800V(Min)(BR)CEOFast Switching speedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator ApplicationsABSOLUTE MAXIMUM RATINGS(Ta=25)

isc Silicon NPN Power Transistor 2SC4429DESCRIPTIONHigh Breakdown Voltage-: V = 800V(Min)(BR)CEOFast Switching speedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator ApplicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Vo

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4421DESCRIPTION Collector-Base Breakdown Voltage-: V = 500V(Min.)(BR)CBOWide Area of Safe OperationHigh Speed Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RA

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4425DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplicatio

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4426DESCRIPTIONHigh Breakdown Voltage-: V = 800V(Min)(BR)CEOFast Switching speedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator ApplicationsABSOLUTE MAXIMUM RATINGS(Ta=25)

isc Silicon NPN Power Transistor 2SC4424DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

isc Silicon NPN Power Transistor 2SC4423DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4427DESCRIPTIONHigh Breakdown Voltage-: V = 800V(Min)(BR)CEOFast Switching speedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator ApplicationsABSOLUTE MAXIMUM RATINGS(Ta=25)