CA3081FX Datasheet. Specs and Replacement
Type Designator: CA3081FX 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Emitter Voltage |Vce|: 16 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 30
Package: PLCC20
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CA3081FX datasheet
CA3081, CA3082 S E M I C O N D U C T O R General Purpose High Current N-P-N Transistor Arrays May 1994 March 1993 Features Description CA3081 - Common Emitter Array CA3081 and CA3082 consist of seven high current (to 100mA) silicon n-p-n transistors on a common monolithic substrate. The CA3082 - Common Collector Array CA3081 is connected in a common emitter configuration and t... See More ⇒
S E M I C O N D U C T O R CA3086 General Purpose N-P-N Transistor Array March 1993 Applications Description Three Isolated Transistors and One Differentially Con- The CA3086 consists of five general-purpose silicon n-p-n nected Transistor Pair For Low-Power Applications transistors on a common monolithic substrate. Two of the from DC to 120 MHz transistors are internally connected to... See More ⇒
S E M I C O N D U C T O R CA3083 General Purpose High Current N-P-N Transistor Array March 1993 Features Description High IC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Max The CA3083 is a versatile array of five high current (to 100mA) n-p-n transistors on a common monolithic substrate. Low VCE sat (at 50mA) . . . . . . . . . . . . . . . . . . . 0.7V Max In... See More ⇒
Detailed specifications: C952, C962, C972, C982, CA3081, CA3081EX, CA3081F, CA3081F-3, 2SD669A, CA3081M, CA3082, CA3082F, CA3082M, CA3250E, CA3250F, CA3251E, CA3251F
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