CBSL30 Datasheet and Replacement

   Type Designator: CBSL30
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 88 W
   Maximum Collector-Base Voltage |Vcb|: 48 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 3.5 V
   Maximum Collector Current |Ic max|: 7.5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 860 MHz
   Collector Capacitance (Cc): 50 pF
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: M169
      - BJT Cross-Reference Search