CG125B Datasheet and Replacement

   Type Designator: CG125B
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Collector Current |Ic max|: 0.02 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 2000 MHz
   Forward Current Transfer Ratio (hFE), MIN: 12
   Noise Figure, dB: -
   Package: MICRO-X
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