CHT2369A Datasheet, Equivalent, Cross Reference Search
Type Designator: CHT2369A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Collector Current |Ic max|: 0.01 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 500 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: CERSOT23
CHT2369A Transistor Equivalent Substitute - Cross-Reference Search
CHT2369A Datasheet (PDF)
cht2312gp.pdf
CHENMKO ENTERPRISE CO.,LTDCHT2312GPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 4.5 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High sat
cht2302wgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHT2302WGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 2.8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-70/SOT-323FEATURE* Small surface mounting type. (SC-70/SOT-323)* High density cell design for low RDS(ON). * Suitable for high packing dens
cht2303gp.pdf
CHENMKO ENTERPRISE CO.,LTDCHT2303GPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 1.9 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High sat
cht2301wgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHT2301WGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 2.3 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-70/SOT-323FEATURE* Small surface mounting type. (SC-70/SOT-323)* High density cell design for low RDS(ON). * Suitable for high packing dens
cht2324gp.pdf
CHENMKO ENTERPRISE CO.,LTDCHT2324GPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 4.2 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High sat
cht2301gp.pdf
CHENMKO ENTERPRISE CO.,LTDCHT2301GPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 2.3 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SOT-23FEATURE* Small surface mounting type. (SOT-23)* High density cell design for low RDS(ON). * Suitable for high packing density.* Rugged
cht2302gp.pdf
CHENMKO ENTERPRISE CO.,LTDCHT2302GPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 2.8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SOT-23FEATURE* Small surface mounting type. (SOT-23)* High density cell design for low RDS(ON). * Suitable for high packing density.* Rugged
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .