CMPT6517 Datasheet, Equivalent, Cross Reference Search
Type Designator: CMPT6517
SMD Transistor Code: C1Z
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 350 V
Maximum Collector-Emitter Voltage |Vce|: 350 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: SOT23
CMPT6517 Transistor Equivalent Substitute - Cross-Reference Search
CMPT6517 Datasheet (PDF)
cmpt6428 cmpt6429.pdf
CMPT6428CMPT6429www.centralsemi.comSURFACE MOUNTDESCRIPTION:NPN SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CMPT6428 and CMPT6429 are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high gain amplifier applications. MARKING CODES: CMPT6428: C1KCMPT6429: C1LSOT-23 CASEMAXIMUM RATINGS: (TA=25
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