CS1509E Datasheet, Equivalent, Cross Reference Search
Type Designator: CS1509E
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 130 MHz
Collector Capacitance (Cc): 1 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO39
CS1509E Transistor Equivalent Substitute - Cross-Reference Search
CS1509E Datasheet (PDF)
brcs150p04sc.pdf
BRCS150P04SCRev.A May.-2020 DATA SHEET / DescriptionsSOP-8 P P-Channel Enhancement Mode Field Effect Transistor in a SOP-8 Plastic Package. / FeaturesV (V) = -40VDSI = -10 A (V =20V)D GSR
brcs150n12sra.pdf
BRCS150N12SRA Rev.A Feb.-2022 DATA SHEET / Descriptions TO-220 N N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , Ultra Low On-Resistance,fast switching. / Applications PFC These d
brcs150n10sbd.pdf
BRCS150N10SBD Rev.A Jun.-2023 DATA SHEET / Descriptions TO-263 N N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features V =100V ; I =46A DS DRDSON@10V15m(Type.14.8m) RDSON@4.5V25m(Type.20.4m) HF Product. / Applications PFC
brcs150n10sra.pdf
BRCS150N10SRA Rev.A Nov.-2021 DATA SHEET / Descriptions TO-220 N N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , Ultra Low On-Resistance,fast switching. / Applications PFC These d
brcs150c02ya.pdf
BRCS150C02YA Rev.A Feb.-2023 DATA SHEET / Descriptions PDFN33-8L Complementary Enhancement MOSFET in a PDFN33-8L Plastic Package. / Features N-channel P-channel VDS(V)=20V VDS(V)=-20V ID=28A ID=-25A RDS(ON)
brcs150p02mc.pdf
BRCS150P02MC Rev.B Mar.-2023 DATA SHEET / Descriptions SOT23-3 P MOS P- CHANNEL MOSFET in a SOT23-3 Plastic Package. / Features V (V) = -20V DSI = -7.0A DRDS(ON)@-4.5V17m(Type.15m) HF Product. / Applications Power Management in
brcs150n10sdp.pdf
BRCS150N10SDP Rev.A Feb.-2022 DATA SHEET / Descriptions TO-252 N N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching, HF Product. / Applications DC/
brcs150p02zj.pdf
BRCS150P02ZJ Rev.A Apr.-2022 DATA SHEET / Descriptions DFN 22B-6L P MOS P-Channel Enhancement Mode Field Effect Transistor in a DFN 22B-6L Plastic Package. / Features VDS (V) = -20V ID = -11A RDS(ON)@-4.5V17m(Type.15m) HF Product. / Applications
brcs150n10szc.pdf
BRCS150N10SZC Rev.A Oct.-2021 DATA SHEET / Descriptions PDFN5*6 N N-Channel MOSFET in a PDFN5*6 Plastic Package . / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance. H
brcs150c016yn.pdf
BRCS150C016YN Rev.A Jul.-2023 DATA SHEET / Descriptions DFN22C-6L Complementary Enhancement MOSFET in a DFN22C-6L Plastic Package. / Features N-channel P-channel V =16V V =-16V DS(V) DS(V)I =8.4A I =-6.3A D DR DS(ON)@-4.5V25m(Typ.21mR) DS(ON)@4.5V15m(Typ.13mR) RR DS(ON)@-2.5V35m(Typ.28mR)
brcs150n12szc.pdf
BRCS150N12SZC Rev.A Jun.-2022 DATA SHEET / Descriptions PDFN56 N N-Channel MOSFET in a PDFN56 Plastic Package. / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance;H
brcs150p04dp.pdf
BRCS150P04DP Rev.A Mar.-2022 DATA SHEET / Descriptions TO-252 P P-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching, Trench Technologies. HF Product. / Applications
cs150n04 a8.pdf
Silicon N-Channel Power MOSFET R CS150N04 A8 General Description VDSS 40 V CS150N04 A8, the silicon N-channel Enhanced ID 150 A PD (TC=25) 100 W VDMOSFETs, is obtained by advanced trench Technology RDS(ON)Typ 4 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switc
cs150n03 a8.pdf
Silicon N-Channel Power MOSFET R CS150N03 A8 General Description VDSS 30 V CS150N03 A8, the silicon N-channel Enhanced ID 150 A PD (TC=25) 100 W VDMOSFETs, is obtained by advanced trench Technology RDS(ON)Typ 2.8 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw
cs150.pdf
CS150 N PD TC=25 150 W 1.2 W/ ID VGS=10V,TC=25 38 A ID VGS=10V,TC=100 24 A IDM 152 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 0.83 /W BVDSS VGS=0V,ID=1.0mA 100 V VGS=10V,ID=24A 0.055 RDS on
cs150n03a8.pdf
Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS150N03A8 General Description VDSS 30 V CS150N03A8, the silicon N-channel Enhanced ID 150 A PD (TC=25) 100 W VDMOSFETs, is obtained by advanced trench Technology RDS(ON)Typ 2.8 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can b
cs150n04a8.pdf
Silicon N-Channel Power MOSFET R CS150N04 A8 General Description VDSS 40 V CS150N04 A8, the silicon N-channel Enhanced ID 150 A PD (TC=25) 100 W VDMOSFETs, is obtained by advanced trench Technology RDS(ON)Typ 4 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switc
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
