CS9003 Datasheet, Equivalent, Cross Reference Search
Type Designator: CS9003
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 4.5 pF
Forward Current Transfer Ratio (hFE), MIN: 110
Noise Figure, dB: -
Package: TO92
CS9003 Transistor Equivalent Substitute - Cross-Reference Search
CS9003 Datasheet (PDF)
brcs900p10dp.pdf
BRCS900P10DP Rev.A Aug.-2023 DATA SHEET / Descriptions TO-252 P MOS P-CHANNEL MOSFET in a TO-252 Plastic Package. / Features VDS(V)=-100V ID=-18A RDS(ON)@-10V
brcs900n10sym.pdf
BRCS900N10SYM Rev.C Feb.-2023 DATA SHEET / Descriptions PDFN56A N Dual N-CHANNEL MOSFET in a PDFN56A Plastic Package. / Features Dual N-Ch VDS(V)=100V ID=13.7A RDS(ON)
Datasheet: CS6208 , CS6209 , CS6305 , CS6305A , CS696 , CS718 , CS718A , CS720A , BC327 , CS9010 , CS9011 , CS9011D , CS9011E , CS9011F , CS9011G , CS9011H , CS9011I .