CTP1034 Datasheet and Replacement
Type Designator: CTP1034
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.075 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.04 A
Max. Operating Junction Temperature (Tj): 60 °C
Transition Frequency (ft): 1 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 45
Noise Figure, dB: -
CTP1034 Substitution
CTP1034 Datasheet (PDF)
ctp10p095.pdf

nvertCTP10P095Suzhou Convert Semiconductor Co ., Ltd.100V P-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched an
ctp10n066.pdf

nvertCTP10N066Suzhou Convert Semiconductor Co ., Ltd.100V N-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched an
Datasheet: CTN635 , CTN636 , CTN637 , CTN638 , CTN639 , CTN640 , CTP1032 , CTP1033 , A1013 , CTP1035 , CTP1036 , CTP1104 , CTP1108 , CTP1109 , CTP1111 , CTP1320 , CTP1330 .
History: NSVMUN5312DW1T2G | NTE103A | BUL310 | OC816 | 2SC1108 | 3DG718A | HBC114YS6R
Keywords - CTP1034 transistor datasheet
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History: NSVMUN5312DW1T2G | NTE103A | BUL310 | OC816 | 2SC1108 | 3DG718A | HBC114YS6R



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