CZT2907 Datasheet, Equivalent, Cross Reference Search
Type Designator: CZT2907
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT223
CZT2907 Transistor Equivalent Substitute - Cross-Reference Search
CZT2907 Datasheet (PDF)
czt2955 czt3055.pdf
CZT2955 PNPCZT3055 NPNwww.centralsemi.comSURFACE MOUNTDESCRIPTION:COMPLEMENTARYThe CENTRAL SEMICONDUCTOR CZT2955 and SILICON POWER TRANSISTORSCZT3055 types are surface mount epoxy molded complementary silicon transistors manufactured by the epitaxial base process, designed for surface mounted power amplifier applications up to 6.0 amps.MARKING: FULL PART NUMBERSOT-223
czt2955.pdf
SMD Type TransistorsPNP TransistorsCZT2955 (KZT2955)Unit:mmSOT-2236.500.23.000.14 Features High Current Low Voltage1 2 3 Surface Mounted Power Amplifier Application Complement to CZT30550.2502.30 (typ)Gauge Plane1.Base 2.Collector0.700.13.Emitter4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
