D11C1051 Datasheet. Specs and Replacement

Type Designator: D11C1051  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.1 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 50 MHz

Collector Capacitance (Cc): 20 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SIP

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D11C1051 datasheet

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Detailed specifications: D10-28B, D10B1051, D10B1055, D10G1051, D10G1052, D115, D11B1052, D11B1055, 2N3904, D11C1053, D11C1057, D11C10B1, D11C10F1, D11C11B1, D11C11F1, D11C1536, D11C1B1

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