2N1043-1 Specs and Replacement
Type Designator: 2N1043-1
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 20 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 100 °C
Electrical Characteristics
Transition Frequency (ft): 0.225 MHz
Collector Capacitance (Cc): 200 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO31
2N1043-1 Substitution
- BJT ⓘ Cross-Reference Search
2N1043-1 datasheet
Detailed specifications: 2N1040-2, 2N1041, 2N1041-1, 2N1041-2, 2N1042, 2N1042-1, 2N1042-2, 2N1043, A1015, 2N1043-2, 2N1044, 2N1044-1, 2N1044-2, 2N1045, 2N1045-1, 2N1045-2, 2N1046
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